Chalcogenide carrier dynamics analysis*
Laser scanning fluorescence lifetime (intensity) imaging system
Fluorescence Lifetime (Intensity) Imaging Systems
Fluorescence kinetic processes and imaging in micro and nano scales of semiconductor samples, photoelectric conversion materials, photocatalytic materials and biological samples
Achievable.
- Fluorescence intensity confocal imaging, fluorescence lifetime imaging
- Carrier Mobility Imaging
- Fluorescence spectroscopy in micro and nano space
- Various imaging and detection functions such as Raman spectral acquisition
Overview
Parameters
Overview
多功能振镜扫描成像系统，是一种利用激光精密扫描、时间分辨采集和图像处理技术获得材料微纳尺度空间内光物理性质的高精密仪器设备，是目前世界先进的时间分辨荧光分析仪器之一。主要用于研究半导体微纳尺度样品，光电转换材料，光催化材料以及生物样品等微纳空间尺度内的荧光动力学过程及成像。可实现荧光寿命成像，荧光强度成像，光电流成像。
Parameters
I. Laser scanning oscillator module
- Laser fiber input, distribution-controlled diaphragm system (regulation range: 25um-2mm)
- Laser scanning imaging range: 256 x 256 pixel dots, up to 4096 x 4096 pixel dots.
- Imaging magnification (zoom): 1-32 times
- Minimum pixel dwell time: 9.6 us (zoom=1); 2.1us (zoom=32)
- Laser scanning wavelength range: 450-1100nm
II. TCSPC Module
- Time accuracy: 7 ps
- Bin Number of channels: 4096
- Time window: 50 ns - 5 us
- Instrument response function (IRF): ≤250 ps
- High sensitivity single photon detector module
- Detection surface diameter: 100 um
- Spectral detection range: 400-1000nm
- Time resolution: < 50 ps FWHM
- Quantum efficiency: 45% @ 550nm
Three, steady-state spectral detection module
- Spectrometer (configuration can be adjusted according to customer needs)
- Focal length: 200mm
- Spectrometer built-in two grating: (according to the user sample emission wavelength range optional)
- Outlet-coupled PMT detectors
- Spectral detection mode: wavelength scanning acquisition (or CCD photo)
- Wavelength detection range: 350-900nm
IV. Inverted microscope module
- With lighting source, dichroic, filters and other basic configuration
- Objective lens set (air lens): 50x, 10x, 5x
- Maximum spatial resolution: ≤500nm (depending on objective and laser/fluorescence wavelength)
V. Germany Pilas single wavelength 405nm semiconductor laser
- Pulse width: <100ps;
- Repetition frequency continuous adjustment: 0.2MHz - 40MHz
- Peak power: > 400mW
- Average power: > 1mW@40MHz
VI. Low temperature system
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